Ferro Launches Two CMP Slurries, Enabling Next-Generation Technology for Leading Edge Electronics

Ferro’s Electronic Material Systems business has further advanced its breakthrough chemical mechanical planarization (CMP) technology with two slurries that enable high-yield processing of 65 nanometer and 45 nanometer node electronic devices. The products have been proven in commercial manufacturing of microelectronics. They will be showcased in booth #6359 at SEMICON West, taking place July 16–20 in San Francisco, CA.

CMP is a required process for manufacturing advanced integrated circuits. Ferro’s new CMP slurries precisely plane silicon wafers to a uniform surface, enabling stacking of multifunctional layers that support smaller, faster, more energy-efficient microprocessors, memory chips with greater storage capacity, and lighter devices for mobile applications. Ferro met the needs of the semiconductor industry in 2004 with a ceria-based slurry that allowed manufacturers to move from 90 nanometer to 65 nanometer node technologies, and has optimized its CMP technologies to create the new products.

Ferro’s patented TruPlane™ high selectivity shallow trench isolation (STI) CMP slurries have post-etch defectivity levels approximately 1.5 to 3 times better than the first-generation slurry and offer a significant improvement over available market alternatives. TruPlane 8272 is performing successfully in high-volume manufacturing of 65 nanometer node Flash devices, and Ferro is supplying leading edge slurries for 45 nanometer node STI logic devices.

Patent-pending SureStop™ 8500 self-stopping CMP slurry for Inner Layer Dielectric (ILD) materials offers improved efficiency and uniformity with lower defectivity compared to standard slurries. It automatically stops polishing when the topography has been removed, saves time and cost relative to standard ILD slurries, and simplifies certain multi-step planarization processes. 

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